Gallium Nitride (GaN) is a wide bandgap semiconductor compound that offers many advantages over more traditionally-used silicon. The use of GaN as a transistor in switching applications can increase efficiency, reduce form factor, and extend the operating temperature range. This makes GaN perfect for desktop adapters and other power conversion applications where high efficiency and small form factor are desired.
GaN’s decreases in switching losses enable higher switching frequencies and a higher power density. These technological improvements allow for the use of smaller internal components and lead to more compact power supplies. GaN desktop adapters offer a lighter option for applications where portable power and product aesthetic are a priority.
Compared to silicon transistors, GaN has a lower on-state resistance. This increases efficiency through reduced conduction losses. GaN also has lower gate and output charges than silicon transistors and a near zero reverse recovery charge. As a result, GaN is far more efficient than traditional silicon transistors.
Due to the wide bandgap, GaN materials offer better thermal conductivity compared to silicon. Along with higher efficiency, this allows for operation at higher temperatures and more efficient cooling of GaN devices, keeping your adapter cool and safe from heat damage.